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提高测温枪测量准确度的方法(铝电解槽用) 被引量:1

A Method to improve the accuracy of infrared thermometer(used for aluminium cells)
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摘要 手持式红外线测温枪被广泛用于铝电解生产的日常维护管理中,其内部参数辐射率值需要根据不同材料进行调节,但由于实际物体,金属或导电体,其辐射率随温度升高而增大,因此测温枪所显示的温度与物体实际温度有偏差。本文用实验方法,以热流计所测量出的温度作为标准温度,在电解槽槽壳上选定了221个测点用两种仪器进行温度测量并进行对比,由此得出了测温枪所显示温度与实际温度的偏差情况并对偏差进行了分析研究。结果表明,在测温枪显示的不同的温度区间,其值都高于实际温度,但偏差值不同。在20~70℃、70~100℃、100~150℃、150~250℃、250~350℃和350~400℃各区间内,其偏差值分别为0℃、5℃、15℃、30℃、45℃和60℃。该结论将大大提高测温枪测量的准确度。 Infrared thermometer is broadly used in daily management of aluminum cells. The radiance value, which is an important parameter for the irdra- red thermometer, needs to be regulated according to different materials of the objects which needs to be tested. However, as to the real objects, such as metal or collduetor,the radiance value will increase while its temperature rises. There is a deviation of the temperature shown on the infrared thermometer com- pared to the real temperature. In this paper,temperature shown on the heat flow sensors is considered as the real temperature. 221 Test points have been selected to test the temperature by infrared thermometer and heat flow sensor respectively. The results show that, in different temperature ranges, the value is higher than the real temperature. In ranges of 20 ~ 70℃ ,70 ~ 100℃, 100 ~ 150℃, 150 ~ 250℃ ,250 ~ 350℃, and 350 ~ 400℃, the deviation are 0℃, 5℃ ,15℃ ,30℃ ,45℃ and 60℃ respectively. This result vill greatly improve the accuracy of the infrared thermometer.
出处 《轻金属》 CSCD 北大核心 2012年第11期32-35,共4页 Light Metals
关键词 测温枪 热流计 准确度 偏差 温度区间 :infrared thermometer heat flow sensor accuracy deviation temperature range
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  • 1宋青林,夏善红,陈绍凤,吕耀.薄膜热导率测量结构的研究[J].仪器仪表学报,2004,25(z1):228-229. 被引量:5
  • 2万闪闪,陆琳,张辉,唐慕萱.稳态平板导热仪最优预热时间的确定[J].热科学与技术,2006,5(2):180-183. 被引量:7
  • 3奥齐西克MN.热传导[M].北京:高等教育出版社,1983.596-598.
  • 4KHORUNZHII I,GABOR H,JOB R.Steady-state thermal conductivity measurements of super-hard materials[J].Measurement:J of Int Measurement Confederation,2002,32(3):163-172.
  • 5HOLMAN J P.Heat transfer[M].New York:McGraw-Hill,2002.
  • 6Maeda M,Nakamura H.Thin Solid Films,1984,112:279-288.
  • 7Turner G W,Connors M K.J.Electrochem.Soc.,1984,131(5):1211-1213.
  • 8Moslehi M M,Fu C Y,Sigmon T W,et al.J.Appl.Phys.,1985,58(6):2416-2419.
  • 9Lowe A J,Powell M J,Elliott S R.J.Appl.Phys.,1986,59:1251-1258.
  • 10Ren S Y,Ching W Y.Phys.Rev.,1981,B23:5454-5463.

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