Sr掺杂BaTi2O5单晶的制备与介电性能研究

Preparation and Dielectric BaTi2O5 Single Property of Sr--doped Crystalline

采用悬浮区熔技术制备了一种Sr掺杂的二钛酸钡（BaTi2O5）单晶（Ba1-xSrxTi2O5，x=O-0．03），重点研究了Sr掺杂量对其结构和介电性能的影响。结果表明：成功制备出物相单一、沿b轴方向生长的Ba1-xSkTi2O5单晶；适量Sr掺杂能有效改善Ba1-xSkTi2O5单晶的介电性能，其居里温度随Sr掺杂量的增加稍有降低，而介电常数极大值则呈现先增大后减小的趋势，在Sr掺杂量X=0．01时达到最大值42190。

In the present study, Sr--doped BaTizOs single crystalline （Ba1- xSrx Ti2O5, x = 0-0.03）, a new type of non--lead fearrolectric material, was prepared by floating zone melting, and the effect of Sr--doping content on the structure and dielectric prop- erty was investigated. Single--phased Ba1-xSrxTi2O5 single crystalline with the nature of growing along b--direction was obtained. The Curie temperature of the Ba1-xSr= T2O5 single crystalline decreased slightly with increasing Sr-doping content, whereas the per- mittivity increased at first and then decreased, showing the maximum value of 42190 at x = 0. 01. The result indicated that appropri- ate Sr--doping could improve the dielectric property of the Ba1-xSrx Ti2O5 single crystalline