摘要
采用悬浮区熔技术制备了一种Sr掺杂的二钛酸钡(BaTi2O5)单晶(Ba1-xSrxTi2O5,x=O-0.03),重点研究了Sr掺杂量对其结构和介电性能的影响。结果表明:成功制备出物相单一、沿b轴方向生长的Ba1-xSkTi2O5单晶;适量Sr掺杂能有效改善Ba1-xSkTi2O5单晶的介电性能,其居里温度随Sr掺杂量的增加稍有降低,而介电常数极大值则呈现先增大后减小的趋势,在Sr掺杂量X=0.01时达到最大值42190。
In the present study, Sr--doped BaTizOs single crystalline (Ba1- xSrx Ti2O5, x = 0-0.03), a new type of non--lead fearrolectric material, was prepared by floating zone melting, and the effect of Sr--doping content on the structure and dielectric prop- erty was investigated. Single--phased Ba1-xSrxTi2O5 single crystalline with the nature of growing along b--direction was obtained. The Curie temperature of the Ba1-xSr= T2O5 single crystalline decreased slightly with increasing Sr-doping content, whereas the per- mittivity increased at first and then decreased, showing the maximum value of 42190 at x = 0. 01. The result indicated that appropri- ate Sr--doping could improve the dielectric property of the Ba1-xSrx Ti2O5 single crystalline
出处
《中国材料科技与设备》
2012年第6期47-48,55,共3页
Chinese Materials Science Technology & Equipment
基金
湖北省国际科技合作项目(2010BFA017)
中央高校基本科研业务费专项资金(2011--II-008)