摘要
In this article we review recent transport property studies on topological insulator thin films grown by molecular beam epitaxy.In pure Bi2Se3 ultrathin films we find an insulating ground state in the presence of weak antilocalization,which indicates the relevance of electron interaction effect.In magnetically doped Bi2Se3 film we observe a systematic crossover between weak localization and weak antilocalization with varied magnetic doping,temperature,and magnetic field.These results demonstrate the intricate interplay between topological delocalization,electron interaction,and broken time reversal symmetry in topological insulator thin films.
In this article we review recent transport property studies on topological insulator thin films grown by molecular beam epitaxy.In pure Bi2Se3 ultrathin films we find an insulating ground state in the presence of weak antilocalization,which indicates the relevance of electron interaction effect.In magnetically doped Bi2Se3 film we observe a systematic crossover between weak localization and weak antilocalization with varied magnetic doping,temperature,and magnetic field.These results demonstrate the intricate interplay between topological delocalization,electron interaction,and broken time reversal symmetry in topological insulator thin films.
基金
supported by the National Natural Science Foundation of China(Grant Nos.10834003,10911130233)
the Ministry of Science and Technology of China(Grant No.2009CB929400)
the Chinese Academy of Sciences
