摘要
A Au/Bi4Ti3O12/n-Si structure is fabricated in order to investigate its current voltage （IV） characteristics in a temperature range of 300 K-400 K. Obtained I-V data are evaluated by the thermionic emission （TE） theory. Zero-bias barrier height （Ф0） and ideality factor （n） calculated from I-V characteristics, are found to be temperature-dependent such that ФB0 increases with temperature increasing, whereas n decreases. The obtained temperature dependence of ФB0 and linearity in ФB0 versus the n plot, together with a lower barrier height and Richardson constant values obtained from the Richardson plot, indicate that the barrier height of the structure is inhomogeneous in nature. Therefore, I-V characteristics are explained on the basis of Caussian distribution of barrier height.
A Au/Bi4Ti3O12/n-Si structure is fabricated in order to investigate its current voltage （IV） characteristics in a temperature range of 300 K-400 K. Obtained I-V data are evaluated by the thermionic emission （TE） theory. Zero-bias barrier height （Ф0） and ideality factor （n） calculated from I-V characteristics, are found to be temperature-dependent such that ФB0 increases with temperature increasing, whereas n decreases. The obtained temperature dependence of ФB0 and linearity in ФB0 versus the n plot, together with a lower barrier height and Richardson constant values obtained from the Richardson plot, indicate that the barrier height of the structure is inhomogeneous in nature. Therefore, I-V characteristics are explained on the basis of Caussian distribution of barrier height.
基金
Project supported by the Diizce University Scientific Research Project(Grant Nos.2010.05.02.056 and 2012.05.02.110)
