期刊文献+

高压IGBT暂态机理模型分析 被引量:9

Transient high voltage IGBT physical model
原文传递
导出
摘要 在已有的绝缘栅双极性晶体管(insulated gate bipolar transistor,IGBT)机理模型的基础上将IGBT分为金属-氧化层-半导体-场效晶体管(metal oxide semiconductor field effect transistor,MOSFET)和双极结型晶体管(bipolar junction transistor,BJT)2部分,分别对其进行建模,同时给出了模型参数的提取方法。模型在Matlab中实现。以FZ600R65KF1型IGBT为例给出了模型参数值,并完成了该型号IGBT的单管测试实验。通过对高压IGBT开通暂态、关断暂态和开关损耗的仿真结果和实验结果进行比较,验证了机理模型对于高压IGBT的适用性。 Insulated gate bipolar transistor (IGBT) physical models were studied to divide the IGBT into metal oxide semiconductor field effect transistor (MOSFET) and bipolar junction transistor (BJT) parts. A high voltage IGBT transient physical model was presented. The parameters extraction method was also given. The model in Matlab was tested in a Buck converter using FZ600R65KF1 IGBT with its parameters provided. By comparing the experiment and simulation results of voltage, current and powerloss waveforms during turn on and turn-off transient, the accuracy of the transient model of high voltage IGBT is verified.
出处 《清华大学学报(自然科学版)》 EI CAS CSCD 北大核心 2012年第11期1578-1583,共6页 Journal of Tsinghua University(Science and Technology)
基金 国家"八六三"高技术项目(2011AA050402)
关键词 关键词:绝缘栅型双极性晶体管(insulated GATE BIPOLAR transistor IGBT) 机理模型 暂态 insulated gate bipolar transistor (IGBT) physical model transient
  • 相关文献

参考文献15

二级参考文献85

共引文献285

同被引文献69

  • 1孟进,马伟明,张磊,赵治华.基于IGBT开关暂态过程建模的功率变流器电磁干扰频谱估计[J].中国电机工程学报,2005,25(20):16-20. 被引量:52
  • 2张薇琳,张波,丘东元.电力电子开关器件仿真模型分析和比较[J].电气应用,2007,26(9):64-67. 被引量:10
  • 3JI S, LU T, ZHAO Z, et al. Modelling of high voltage IGBT with easy parameter extraction [ C ]//Proceedings of the 7th International Power Electronics and Motion Control Conference. Harbin: IEEE, 2012: 1511-1515.
  • 4HSU J T, NGO K D T. Behavioral modeling of the IGBT using the Hammerstein configuration[ J ]. IEEE Transactions on Power Electronics, 1996, 11 (6) : 746- 754.
  • 5HEFNER A R. A dynamic electro-thermal model for the IGBT[J]. IEEE Transactions on Industry Applications, 1994, 30(2): 394-405.
  • 6HEFNER A R, DIEBOLT D M. An experimentaUy verified IGBT model implemented in the Saber circuit simulator[ J ]. IEEE Transactions on Power Electronics, 1994, 9(5). 532-542.
  • 7CLAUDIO A, COTOROGEA M, AGUAYO J, et al. Behavior analysis of the IGBT in ZCS commutation based in a soft modeling coneept[C]///Proeeedings of the 7th Workshop on Computers in Power Electronics. Blacksburg: IEEE, 2000: 97-101.
  • 8PALMER P R, BRYANT A T, HUDGINS J, et al. Simulation and optimisation of diode and IGBT interaction in a chopper cell using MATLAB and Simulink[C]//Proceedings of the 37th IAS Annual Meeting Industry Applications Conference. Pittsburgh: IEEE, 2002 : 2437-2444.
  • 9BONNET G, AUSTIN P, SANCHEZ J L. New distributed model of NPT IGBT dedicated to power circuits design[ J]. Microelectronics Reliability, 2004, 44( 1 ) : 79-88.
  • 10HEFNER A R. Analytical modeling of device-circuit interactions for the power insulated gate bipolar transistor (IGBT) [ J]. IEEE Transactions on Industry Applications, 1990, 26(6): 995-1005.

引证文献9

二级引证文献35

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部