摘要
This paper aims to obtain some ＂universal method and result＂ to quantitatively analyze the influence of contact resistance （CR） on OTFTs, which has not been reported up to now. This is partly achieved by means of the simulated method and the introduction of Rc/Rcho （the value of CR/on state channel resistance）. To do this, the OTFT formula from the Brown model is extended, and the parameter （errors carrier mobility/z, saturation voltage Vosat, etc.） caused by Rc are analyzed in detail. Then, the Rc/Rcho test method is emphatically demonstrated, and some meaningful conclusions are drawn. Based on the conclusion, it is the first time that a ＂universal method＂ of estimating the errors caused by Rc has been put forward. Experimental results further prove that the method is correct.
This paper aims to obtain some ＂universal method and result＂ to quantitatively analyze the influence of contact resistance （CR） on OTFTs, which has not been reported up to now. This is partly achieved by means of the simulated method and the introduction of Rc/Rcho （the value of CR/on state channel resistance）. To do this, the OTFT formula from the Brown model is extended, and the parameter （errors carrier mobility/z, saturation voltage Vosat, etc.） caused by Rc are analyzed in detail. Then, the Rc/Rcho test method is emphatically demonstrated, and some meaningful conclusions are drawn. Based on the conclusion, it is the first time that a ＂universal method＂ of estimating the errors caused by Rc has been put forward. Experimental results further prove that the method is correct.
基金
project supported by the Fujian Natural Science Foundation,China(No.2009J05146)
