稀土金属Tb催化制备GaN纳米棒(英文)

Preparation of GaN Nanorods by Rare Earth Metal Tb Catalyst-Assisted Process

利用稀土金属Tb作为催化剂,通过氨化磁控溅射在Si(111)衬底上的Ga2O3/Tb薄膜制备出GaN纳米棒。X射线衍射和傅里叶红外吸收谱测试结果表明,制备的样品为六方结构的GaN。利用扫描电子显微镜、透射电子显微镜和高分辨透射电子显微镜对样品进行测试,结果显示样品为单晶结构的纳米棒,直径为80～200nm,长度达几十微米。最后简单地讨论了GaN纳米棒的生长机制。

Rare earth metal Tb was employed as the catalyst to prepare GaN nanostructures.GaN nanorods were synthesized through ammoniating Ga2O3/Tb films sputtered on Si（111） substrates.Results of X-ray diffraction（XRD） and Fourier transform infrared spectrum（FTIR） indicate that the prepared nanorods are hexagonal GaN.Observations of scanning electron microscopy（SEM）,transmission electron microscopy（TEM） and high-resolution transmission electron microscopy（HRTEM） show that the GaN nanorod is single-crystalline in structure with 80～200 nm in diameter and several tens of microns in length.The growth mechanism of GaN nanorods was also discussed briefly.