CVD温度对钽沉积层性能的影响

Effect of Chemical Vapor Deposition Temperature on Properties of Tantalum Coatings

介绍了化学气相沉积(CVD)制备难熔金属钽涂层的原理及方法。采用冷壁式化学气相沉积法,在钼基体上沉积出难熔金属钽层。分析研究了CVD温度对沉积层的沉积速率、组织、结构和硬度等的影响。结果表明:在1000～1200℃温度范围,沉积速率随温度升高而增大;当温度超过1200℃时,沉积速率随温度的升高反而略有减小;沉积层组织呈柱状晶并随温度的升高逐渐增大;沉积层的硬度及密度随温度的升高而逐渐降低。化学气相沉积钽的最佳温度在1100℃左右。

The principle and method of chemical vapor deposition tantalum were proposed.Through the cold wall deposition,tantalum coatings were deposited on molybdenum substrates.The effect of CVD temperature on deposition rate,microstructure and hardness of Ta coatings was investigated.The results show that with the increasing of the deposition temperature,the deposition rate increases in the range of 1000～1200 °C;above 1200 °C,the deposition rate decreases;the microstructure of the deposition layer is of columnar grain and the grain size increases with the increasing of the deposition temperature.Meanwhile the hardness and density of the deposition layer decreases.The optimal deposition temperature of CVD tantalum layer is about 1100 °C.