镀镍硅基底上利用化学池沉积法制备二硫化钼膜

Preparation of MoS_2 Film on Si Substrate with Ni as Interlayer in Chemical Bath Deposition

利用化学池沉积法在化学镀镍的n-Si基底上沉积MoS2薄膜.结果显示,MoS2膜的最佳合成条件为:钼酸铵浓度为10-4 mlo/L,退火温度为850℃.此时,得到具有六角晶形的Ⅱ型膜,MoS2膜晶体尺寸约200nm.没有Ni诱导层的MoS2膜结晶很差,无确定取向.相同条件下,以Ni为诱导层的样品为具有沿[002]取向的Ⅱ型MoS2膜,并且具有较好的六角晶形,说明Ni诱导层对于得到Ⅱ型MoS2膜的重要性.Ni诱导层的影响归于液态S-Ni相的形成并提供的沿[002]方向的生长动力.

MoS2 film was prepared by chemical bath deposition using Ni interlayer,which was deposited electrolessly on Si substrates.The combined technique of X-ray diffraction and field emission scanning electron microscope（FESEM） were used for characterization of MoS2 films obtained on different conditions.Results indicated that the highly textured type-II MoS2 films oriented with their caxis perpendicular to the plane of Si substrates were obtained at annealing temperature greater than 800 ℃ with Ni Interlayer.The effect of nickel on the orientation of 2H-MoS2 crystallites can be explained on the basis of binary Ni-S phase diagram.This paper offers an easy way to prepare type-II MoS2 film.