红外用超薄PtSi膜的一种制备新方法

Growth of Ultrathin PtSi Films for Infrared Applications

膜厚制约着PtSi红外探测器的量子效率。本文介绍了一种根据固相反应理论 ,在 1 0 - 4 Pa量级真空度条件下 ,采用真空退火、化学腐蚀手段制备超薄 (约 5 5nm)PtSi膜的新工艺方法 ,并用XRD ,XPS对所制备的样品进行了物相分析。该方法所需温度低 ,时间短 。

The film thickness creates a bottleneck in the quantum efficiency of PtSi film infrared detector.A novel technique has been developed to grow ultrathin PtSi films.Based on solid reaction theory,an ultrathin PtSi film with a thickness of 5 5 nm was grown by vacuum annealing followed by chemical etching at 10 -4 Pa.The films were studied with X ray diffraction and X ray photoelectron spectroscopy.The results show that the new technique has several advantages over the conventional one,such as low reaction temperature,short reaction time,and fairly uniform PtSi films.