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Influence of Annealing Temperature on the Properties of TiO_2 Films Annealed by ex situ and in situ TEM

Influence of Annealing Temperature on the Properties of TiO_2 Films Annealed by ex situ and in situ TEM
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摘要 TiO2 thin films were deposited on quartz substrates by DC reactive magnetron sputtering of a pure Ti target in Ar/O2 plasma at room temperature. The TiO2 films were annealed at different temperatures ranging from 300 to 800 ℃ in a tube furnace under flowing oxygen gas for half an hour each. The effect of annealing temperatures on the structure, optical properties, and morphologies were presented and discussed by using X-ray diffraction, optical absorption spectrura, and atomic force microscope. The films show the presence of diffraction peaks from the (101), (004), (200) and (105) lattice planes of the anatase TiO2 lattice. The direct band gap of the annealed films decreases with the increase of annealing temperature. While, the roughness of the films increases with the increases of annealing temperature, and some significant roughness changes of the TiO2 film surfaces were observed after the annealing temperature reached 800 ℃. Moreover, the influences of annealing on the microstructures of the TiO2 film were investigated also by in situ observation in transmission electron microscope. TiO2 thin films were deposited on quartz substrates by DC reactive magnetron sputtering of a pure Ti target in Ar/O2 plasma at room temperature. The TiO2 films were annealed at different temperatures ranging from 300 to 800 ℃ in a tube furnace under flowing oxygen gas for half an hour each. The effect of annealing temperatures on the structure, optical properties, and morphologies were presented and discussed by using X-ray diffraction, optical absorption spectrura, and atomic force microscope. The films show the presence of diffraction peaks from the (101), (004), (200) and (105) lattice planes of the anatase TiO2 lattice. The direct band gap of the annealed films decreases with the increase of annealing temperature. While, the roughness of the films increases with the increases of annealing temperature, and some significant roughness changes of the TiO2 film surfaces were observed after the annealing temperature reached 800 ℃. Moreover, the influences of annealing on the microstructures of the TiO2 film were investigated also by in situ observation in transmission electron microscope.
出处 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2012年第6期1014-1019,共6页 武汉理工大学学报(材料科学英文版)
基金 Funded by the National Basic Research Program of China (973 Program, 2009CB939704) the NSFC (No. 10905043, 11005082, 11004052) the Specialized Research Fund for the Doctoral Program of Higher Education (20100141120042, 20110141130004) the Foundations from Chinese Ministry of Education (311003) the Open Research Fund of State Key Laboratory of Electronic Thin Films and Integrated Devices (UESTC) (KFJJ201004) Young Chenguang Project of Wuhan City (201050231055) the Fundamental Research Funds for the Central Universities, Hubei Provincial Natural Science Foundation(2011CDB270)
关键词 TiO2 films DC reactive magnetron sputtering ANATASE in situ TEM ANNEALING TiO2 films DC reactive magnetron sputtering anatase in situ TEM annealing
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