以MOCVD为基础的光电子平台设计与开发

Design and Development of Photo-electronic Station Based on MOCVD

光电子平台是光电子器件研发的基础平台,可用于高效叠层薄膜光伏电池、量子激光器、探测器、传感器等光电子器件的研发及制备。本文从材料生长、器件工艺、测试平台、安全设计4个方面讨论了以MOCVD为基础的光电子平台的总体设计思路,包括了制备平台设计、材料生长仿真模拟分析、工艺优化、过程控制优化、测试分析设备整合优化、高危气体管道改造、尾气回收装置设计的实施方案。平台设计将主要为Ⅲ-Ⅴ族化合物半导体材料生长以及器件制作服务,通过不断设计改进最终建设成为集前沿材料生长研究和新型光电子器件研发的光电子技术科学研究平台。

Photo-electronic Stations are basic station for the research of photo-electronic devices. They are mainly used to conduct the investigation of high-efficiency tandem thin film solar cells, quantum laser, detector, sensor and so on. In this paper, the overall design concepts of photo-electronic station based on MOCVD are discussed in terms of material growth, device fabrication, measurement and safety design. Furthermore, specific implementations of fabrication station, material growth simulation, technology and process optimization, measurement integration, pipeline reform, emission design are investigated. The station is designed primarily for the fabrication of III-V compounding semiconductor materials and devices. An integrated photo-electronic materials and devices researeh station will be developed with continuous improvement. Two patents are proposed during the detail design process.