256分辨率电阻阵性能测试及非线性校正方法

Method of 256-resolution resistor array performance testing and non-linearity correction

256×256像元MOS电阻阵是红外成像制导系统半实物仿真的核心器件,其芯片的性能直接影响仿真性能和实验结果,而其能测试和非线性修正一直是红外成像仿真领域的关键问题和前沿技术。深入分析了电阻阵主要性能指标的测试方法,在测试和实验的基础上,提出了映射配准和失效像素补偿的算法,设计了基于指数曲线的非线性修正模型,完成了修正补偿工作并进行了测试和分析。结果表明非线性修正算法可行,修正后的MOS电阻阵线性控制特性较好,红外图像灰度层次有较大提高,较好地满足了红外成像制导的仿真需求。

The MOS resistor array with 256×256 pixels is a core device for the hardware-in-the-loop simulation of an infrared imaging guidance system; the performance of its chip has a direct effect on the simulation performance and experimental results. But the MOS resistor array＇s performance testing and nonlinearity correction have always been the bottleneck problems and cutting-edge technologies for infrared imaging simulation. Hence the existing performance index testing methods were analyzed and based on the tests and experiments, the mapping registration and faulty pixel compensation algorithm was proposed. Then the non-linearity correction model was designed based on the exponential curve and the correction compensation was accomplished, tested and analyzed. The test results show that the non- linearity correction algorithm is workable; the linear control characteristics of the MOS resistor array corrected by the proposed algorithm are desirable; the gray scale of the infrared image of the resistor array is greatly enhanced, meeting the requirements for infrared imaging guidance simulation.