过共晶成份InSb-NiSb复合材料的组织与磁电性能

The Structure and Magnetoresistance of Hyper-Eutectic InSb-NiSb Composites

两种过共晶成份2.0与2.5％NiSb—InSb(重量)复合材料,在G=75℃/cm和6种单向凝固速度下皆取得了规则排列的共晶组织。测出它们在离锭棒底25和50mm处纤维间距(λ)和凝固速度(R)之间的关系为(λ—A)~2R=C并求出C值。测出它们的霍耳系数与温度的关系R_H-1/T曲线,发现低温区有类p-型和n-型两类半导体特性。此外还测出了它们在不同磁感强度(B)和不同温度下的电阻值,并求出磁阻比R_ B/R_O和零磁场电阻R_O的温度系数α_B和α_o论文还讨论了影响磁阻比的因素。

Two composites of 2.0 and 2.5 wt% NiSb-InSb hypereutectics unidirectio-nally solidified under G = 75C/cm and 6 solidification rates, aligned eutectic microstructures are appeared. By measuring the NiSb fibre spacings (λ) at 1 = 25 and 50 mm, relations between fibre spacing (λ) and solidification rate <R).(λ-A)2 R = C are found. With Hall-voltage test, Hall coefficient (RH) -temperature (T) curves are determined, and at low temperature range quasi p-type and n-type semiconductor characteristics are found. The resistances under different magnetic inductance B, and different temperatures are measured, and temperature coefficient αB and α are found.