摘要
高效、低成本是目前硅太阳电池追求的主要目标。多晶硅太阳电池成本低,但其电性能较差。背面钝化及局部背接触是提高多晶硅太阳电池电性能的主要技术。通过采用SiO2/SiNx叠层膜作为背钝化介质层,依次经过背面开槽、丝网印刷、烧结形成背面局部接触,制备钝化发射极和背表面电池(PERC)结构多晶硅太阳电池。采用恒光源I-V特性测试系统测试其电性能,结果表明:较之常规铝背场多晶硅太阳电池,PERC结构电池在开路电压Voc、短路电流密度Jsc、转换效率η方面分别提高了13 mV、1.8 mA/cm2和0.67%(绝对值),其转换效率达到17.27%。PERC结构多晶硅电池采用了常规丝网印刷工艺,有利于实现高效多晶硅电池的产业化生产,具有很高的实际意义。
High efficiency and low production costs are always the goal for silicon solar cells.Polycrystalline silicon solar cells are low production costs,but poor cell performance,rear surface passivation and rear local contact are main technologies to improve the performance of polycrystalline silicon solar cells.SiO2/SiNx was taken as the rear surface passivation layer.Rear laser ablation,screen printing and sintering processes were taken in sequence to form rear local contact.From above steps,passivated emitter and rear cell(PERC) polycrystalline silicon solar cells can be prepared.Measurements of I-V features show that the open circuit voltage(Voc),conversion efficiency(η) and short circuit current(Jsc)of the PERC polycrystalline silicon solar cells are significantly higher than that of Al-BSF(aluminium back surface field).The values are 13 mV,0.67%,and 1.8 mA/cm2,respectively,and the conversion efficiency of the cell is 17.27%.The PERC polycrystalline silicon solar cell using a conventional screen printing process is valuable to the industrial production of high efficiency polycrystalline silicon solar cells.
出处
《半导体技术》
CAS
CSCD
北大核心
2012年第12期939-942,968,共5页
Semiconductor Technology