期刊文献+

钛含量对PZT/STO铁电电容器隧穿电阻的影响

Effects of Ti contents to the tunneling electroresistance of PZT/STO ferroelectric capacitors
下载PDF
导出
摘要 采用Landau-Devonshire自由能理论和晶格模型,研究了PbZr1-xTixO3(PZT)/SrTiO3(STO)复合薄膜中PZT的钛(Ti)含量(x=0.5,0.6,0.8,1.0)对铁电隧道结极化强度、总电势、电导和隧穿电阻等的影响,从而增大隧穿电阻.模拟结果表明:随着层数增加,复合薄膜极化强度增大;随着Ti含量增加,隧道结电导先减小后增大,其隧穿电阻率先增大后减小;PZT极化强度、STO总电势和PZT总电势的斜率均在x=0.8时最大. Applying Landau-Devonshire free energy theory and lattice model, the effects of different Ti contents(x = 0. 5,0. 6,0. 8,1.0) of the PbZr1-x, TixO3 (PZT) in the PZT/SrTiO3 (STO) composite films on the intensity of polarization, total electric potential, conductance and tunneling electroresistance in the ferroelectric tunnel junction have been discussed. The results show that as the number of layers increases, the intensity of polarization of PZT increases. And as Ti contents increase, the intensity of polarization of PZT increases, and conductance shows a trend of first decrease and then increase, and tunneling electrore-sistance shows a trend of first increase and then decrease. The intensity of polarization of PZT, total electric potential of STO and slope of total electric potential of PZT are the biggest when x=0.8.
出处 《河北大学学报(自然科学版)》 CAS 北大核心 2012年第6期587-591,共5页 Journal of Hebei University(Natural Science Edition)
基金 河北省自然科学基金资助项目(E2012201035)
关键词 铁电电容器 隧穿效应 Landau模型 PZT the ferroelectric capacitors the tunneling effect Landau model PZT
  • 相关文献

参考文献16

  • 1FIEBIG M,LOTTERMOSER Th,FRHLICH D,et al.Observation of coupled magnetic and electric domains[J].Na-ture,2002,419:818-820.
  • 2CHANTHBOUALA A,MATSUMOTO R,GROLLIER J,et al.Vertical-current-induced domain-wall motion in MgO-based magnetic tunnel junctions with low current densities[J].Nature Physics,2011,7:626-630.
  • 3GRUVERMAN A,WU D,LU H,et al.Tunneling electroresistance effect in ferroelectric tunnel junctions at thenanoscale[J].Nano Lett,2009,9:10.
  • 4BURTON J D,TSYMBAL E Y.A giant tunneling electroresistance effect driven by an electrically controlled spin valveat a complex oxide lnterface[J].Phys Rev Lett,2011,106:157203-1-157203-4.
  • 5PANTEL D,LU Haidong,GOETZE S,et al.Tunnel electroresistance in junctions with ultrathin ferroelectric Pb(Zr0.2Ti0.8)O3barriers[J].Appl Phys Lett,2012,100:232902-1-232902-4.
  • 6DULUARD A,NEGULESCU B,BELLOUARD C,et al.Fe/MgO/Fe(100)textured tunnel junctions exhibiting spinpolarization features of single crystal junctions[J].Appl Phys Lett,2012,100:072408-1-072408-4.
  • 7ZHURAVLEV M Y,WANG Y,MAEKAWA S,et al.Tunneling electroresistance in ferroelectric tunnel junctions witha composite barrier[J].Appl Phys Lett,2009,95:052902-1-052902-4.
  • 8WU YinZhong,JU Sheng,LI Zhenya.Effects of electrodes and space charges on the tunneling electroresistance in theferroelectric tunnel junction with a STO/BaTiO3composite barrier[J].Appl Phys Lett,2010,96:252905-1-252905-4.
  • 9PANTEL D,GOETZE S,HESSE D,et al.Reversible electrical switching of spin polarization in multiferroic tunneljunctions[J].Nature Materials,2012,11:289-293.
  • 10BOLLINGER A T,DUBUIS G,J Y.Superconductor-insulator transition in La2-xSrxCuO4at the pair quantum resist-ance[J].Nature,2011,472:458-460.

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部