Co/Cu非连续多层膜的制备和GMR性能的研究

Study on Preparation and GMR Effect of Co/Cu Discontinuous Multilayer Films

采用磁控溅射法制备了系列[Co0.55nm/Cut]30(t=0.6,0.9,1.2,1.5,1.8,2.1,2.4,2.7,3.0)非连续多层膜样品,并利用四探针法研究了Cu层厚度、退火温度以及周期数对薄膜巨磁阻(GMR)效应的影响。磁电阻测量表明,随着非铁磁层Cu层厚度的增加,薄膜样品的GMR效应总体呈下降趋势,并出现了振荡现象;经退火处理后,薄膜的GMR效应呈先增大后减小的趋势,在350℃达到最大,为-5.1%;薄膜的GMR效应随着周期数的增加而增大,当周期数为50时趋于恒定。

[Co0.55mm/Cut]30 discontinuous multilayer films（t=0.6,0.9,1.2,1.5,1.8,2.1,2.4,2.7,3.0） were grown on Cr buffer layer which deposited on glass substrates by magnetron sputtering. The effects of Cu layer thickness, annealing temperature and period number on GMR of [Coo55/Cu]30 films were stud- ied by four-point probe method. The results of magnetic resistance measurement show that with the increase of the Cu-layer thickness, the GMR effect of the film samples appears the overall down- ward trend and the emergence of oscillations. then decreases with the increase of annealing 350 ℃. The GMR effect increases with period period number is 50. After annealed, the GMR effect first increases and temperature, which reaches the maximum-5.1% at number increasing, and reaches a steady value when