硅基GaN功率半导体技术

GaN-on-Si Power Semiconductor Technology

宽禁带半导体氮化镓(GaN)器件具有高压、高速、高功率、高效率、耐高温等优点,针对未来功率电子应用,GaN器件具有传统Si材料器件所不可比拟的优势。Si基GaN(GaN-on-Si)功率半导体技术由于使用Si衬底材料,可在大直径硅晶圆上外延GaN且具有与传统Si工艺兼容等优势,成为未来功率半导体技术发展的理想选择。在此从GaN-on-Si功率半导体所涉及的GaN外延技术、器件耐压优化、增强型器件技术、电流崩塌效应、Si工艺兼容、功率集成、器件可靠性等多个方面报道了GaN-on-Si功率半导体技术的最新研究进展,并分析了GaN-on-Si功率半导体技术未来面临的机遇与挑战。

Owing to the uniquely superior material properties for the applications of high voltage, high speed, high pow- er density,high power efficiency,the wide bandgap GaN has attracted tremendous attention recently.By featuring the advantage of low-cost attributes to the cheap Si substrate, the availability of large diameter Si substrate and Si process compatible GaN-on-Si power semiconductor technology is a promising candidate for future power electronics.This paper reviews the recent progress in GaN-on-Si power semiconductor including GaN epitaxy,breakdown voltage enhance- ment, enhancement-mode GaN power device, current collapse, Si compatible process, power integration and device reli- ability.The opportunities and challenges of GaN-on-Si technology for future power electronics are also discussed.