具有逆向导通能力的GaN功率开关器件

The GaN Power Switch With Reverse Conducting

介绍了一种具有逆向导通能力的GaN功率开关器件逆向导通-高电子迁移率晶体管(RC-HFET)。通过在栅极与漏极之间插入一个肖特基电极并与源极连接,RC-HFET获得了一个逆向导电通路,从而相当于一个功率开关与二极管反并联结构。RC-HFET正向工作的原理与传统HFET相似,导通电阻与传统HFET相近。在器件制造上,RC-HFET与传统HFET完全兼容,无需额外的光刻版及加工流程。因此,在电机驱动等需要反向续流的功率系统中,RC-HFET消除了对续流二极管的需求,提供了一种更具成本优势的方案。

A reverse conducting GaN power switch reverse conducting high electron mobility transistor（RC-HFET） is presented.A Schottky contact that electrically connected with the source is put between the gate and the drain as a re- verse conducting path,thus equivalent to a transistor and diode in antipalleled configuration.The forward working mechanism of RC-HFET is similar to that of the conventional HFET, with close on resistances.The fabricating of the RC-HFET is highly compatible with the conventional HFET, needing no additional photolithography and other process. Therefore, in power systems such as motor controlling, RC-HFET avoids the requirement for a freewheeling diode, of- feting a cost effective solution.