600 V GaN HEMT开关特性和封装研究

Research on Switching Performance and Packaging Technic of 600 V GaN HEMT

分析讨论了共源共栅级联结构GaN晶体管的工作机理,研究了影响开关速度的主要因素,提出了驱动电路的设计方法。分析了级联GaN HEMT反向恢复电荷的产生和影响因素,并与SiC二极管进行比较。通过器件开关特性测试平台,分别将级联GaN HEMT与CoolMOS进行开关特性对比分析,与SiC二极管进行反向恢复特性对比分析,定量比较了GaN HEMT与CoolMOS和SiC二极管在无桥PFC中的性能。分析验证了器件封装技术对GaN开关性能的影响,指出了高速器件封装技术的发展方向。

This paper analyses and discusses the working principle of cascode configured GaN transistor, and investigates the influence factors of switching speed.Design method of driving circuit is proposed based on the analysis.The components of reverse recovery charge of cascode GaN HEMT are analyzed,which are compared with SiC SBD in experiment. Switching and reverse recovery performances of GaN, CoolMOS and SiC SBD are compared using a specially designed test board.According to the test results, performances of bridgeless PFC topologies based on GaN, CoolMOS and SiC SBD are evaluated.The impact of packaging technology on switching performance of GaN device is analyzed, and the development trend for high speed device is pointed out.