摘要
针对IGBT器件驱动电路损耗计算及驱动电源设计,分析了IGBT器件门极控制机理,建立了器件驱动电路在开关过程的等效电路,推导了门极电压和电流的解析式,给出了驱动功耗的计算方法。仿真和实验结果表明,建立的开关模型能够精确描述IGBT在开关过程中的电压电流变化,基于此模型的驱动电路功耗计算结果可作为驱动电源设计或选型的依据。
Aiming at the losses calculation and power source designing of gate driving circuit for IGBT device ,the mechanism of the device＇s gate controlling transient is analyzed, and the voltage and current equations which can de- scribe the gate operation principle, are expressed based on the equivalent circuit of the device＇s switching process. Finally,the formula of gate power losses calculation is given.The simulation and experimental results show that the model can describe IGBT device＇s gate characteristic precisely, and the power losses calculation can be used as a basis of designing or selection to the gate driving power source.
出处
《电力电子技术》
CSCD
北大核心
2012年第12期106-108,共3页
Power Electronics
基金
陕西省工业攻关计划资助项目(2010K09-09)~~
关键词
晶体管
门极驱动电路
数学模型
门极驱动功耗
transistor
gate driving circuit
mathematical model
gate driving power losses
