期刊文献+

一种消除阈值电压影响的高效率电荷泵 被引量:3

High Efficiency Charge Pump Without Threshold-Voltage Drop
下载PDF
导出
摘要 提出了一种基于Dickson电荷泵结构的片上升压电路,由两相非交叠时钟驱动,并与电平转换单元配合使用。该电路将最后一级的传输管NMOS管替换为PMOS管,再由电平转换单元产生的电压来控制该PMOS管的栅端电压,使之在导通时彻底打开,从而消除该级的阈值电压损失,提高了输出电压。 A high-efficiency charge pump based on Dickson charge pump was proposed, which was driven by a non-overlapping clock and used with level shifter. In this circuit, NMOS transistor used as transfer unit in the last stage was substituted with PMOS transistor. The gate of the PMOS was driven by a voltage generated by a level shifter, which eliminated the threshold-voltage drop, and significantly increased output voltage of the charge pump.
出处 《微电子学》 CAS CSCD 北大核心 2012年第6期800-802,809,共4页 Microelectronics
基金 国家重点基础研究发展(973)计划基金资助项目(2010CB934204 2011CBA00600) 国家自然科学基金资助项目(60825403 61176080 61176073)
关键词 电荷泵 Dickson电荷泵 电平转换电路 Charge pump Dickson charge pump Level shifter
  • 相关文献

参考文献8

  • 1KAWAHARA T, KOBAYASHI T, JYOUNO Y, et al. Bit-line clamped sensing multiplex and accurate high voltage generator for quarter-micron flash memories [J]. IEEE J Sol Sta Circ, 1996, 31. 1590-1600.
  • 2WU J-T, CHANG Y-H, CHANG K L. 1.2 V CMOS switch-capacitor circuits [C]//IEEE ISSCC Dig Tech Pap. San Francisco, CA, USA. 1996: 388-389, 479.
  • 3尚晓丹,王继安,张佳,王娜,李威,龚敏.一种产生正负倍压的电荷泵的优化设计[J].微电子学,2006,36(4):522-525. 被引量:1
  • 4DICKSON J F. On-chip high voltage generation in MNOS integrated circuits using an improved voltage multiplier technique [J]. IEEE J Sol Sta Circ, 1976, 11(3) : 374-378.
  • 5PAN F, SAMADDAR T. Charge pump circuit design[M]. New York, USA: McGraw-Hill, 2006.
  • 6WU J-T, CHANG K-L. MOS charge pumps for low- voltage operation[J]. IEEE J Sol Sta Circ, 1998, 34 (4) : 592-597.
  • 7RAZAVI B. Design of analog CMOS integrated circuits [M ]. [ S. I. ]: McGraw-Hill Higher Education, 2001: 330-360.
  • 8CAMPARIO G, MICHELONI R, NOVOSEL D. VLSI-design of non-volatile memories [M]. New York, USA: Springer, 2005. 115-117.

二级参考文献6

  • 1Wu J-T,Chang K-L.MOS charge pumps for low-voltage operation[J].IEEE J Sol Sta Circ,1998,33(4):592-597.
  • 2Ying T R,Ki W H,Chan M.Area-efficient CMOS charge pumps for LCD drivers[J].IEEE J Sol Sta Circ,2003,38(10):1721-1725.
  • 3Pelliconi R.Power efficient charge pump in deep submicron standard CMOS technology[J].IEEE J Sol Sta Circ,2003,38(6):1068-1071.
  • 4Bingham D.Integrated dual charge pump power supply and RS-232 transmitter/receiver[P].US Patent 4999761,Mar.1991.
  • 5Favrat P,Deval P,Declercq M J.A high-efficiency CMOS voltage doubler[J].IEEE J Sol Sta Circ,1998,33(3):410-416.
  • 6Wang C C,Wu J C,Efficiency improvement in charge pump circuits[J].IEEE J Sol Sta Circ,1998,32 (6):852-860.

同被引文献12

引证文献3

二级引证文献4

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部