太阳能电池用多晶硅晶界的EBSD研究

Electron Back Scattered Diffraction Study on Grain Boundaries in Polycrystalline Silicon of Solar Cells

利用电子背散射衍射(Electron back scattered diffraction,EBSD)对太阳能电池用多晶硅的晶界进行了研究。结果表明,太阳能电池用多晶硅中的大部分晶界为大角度晶界,且以特殊晶界Σ3和普通晶界为主,同时还存在少量小角度晶界。在制作太阳能电池用多晶硅时,重点要降低小角度晶界和Σ3的含量。

The grain boundary in polycrystalline silicon of solar cells was studied by electron back scattered diffraction （EBSD）. The results show that most grain boundaries observed are large angle grain boundaries. ∑3 and common grain boundaries are the chief of these large angle grain boundaries. Small angle grain boundaries were also observed with a low ratio. Decrease the content of small angle grain boundaries and ∑3 in preparing polycrystalline silicon of solar cells is the emphasis.