太阳电池用非晶碳薄膜在黑硅衬底上的生长

The Growth of Amorphous Carbon Thin Films on Black Silicon for Solar Cells

利用微波等离子体化学气相沉积(MPCVD)法在黑硅和抛光单晶硅片衬底上生长非晶碳薄膜,其中变量为CH4流量,分别为10sccm、14sccm、18sccm、22sccm、26sccm。通过扫描电子显微镜(SEM)、X射线衍射分析(XRD)、原子力显微镜(AFM)、拉曼光谱表征了非晶碳薄膜的结构和形貌特征。结果表明,在650℃时随着CH4流量的逐渐增加,在平整的非晶碳薄膜上C-C的sp2相团簇颗粒的直径逐渐变大。AFM测试结果显示,非晶碳薄膜表面的平均粗糙度(Ra)为0.494nm。

The hydrogenated amorphous carbon thin films were prepared on black silicon and polished silicon substrates for solar cell by microwave plasma chemical vapor deposition （MPCVD）. Flow rates of methane were 10sccm,14sccm, 18sccm, 22sccm, 26sccm. Test results of scanning electron microscopy （SEM）, X-ray diffraction （XRD）, atomic force microscopy （AFM） and Raman scattering spectroscopy reflected the characteristics of amorphous carbon films. The results show that at 650℃ , the diameter of sp2 carbon-carbon bonding cluster particles, which are growing on hydrogenated amorphous carbon, increases gradually with the increase of methane flow rate. AFM results demonstrate that average surface roughness （Ra） of amorphous carbon thin films is 0. 494nm.