期刊文献+

LDMOS在相控阵雷达中的可靠应用研究 被引量:7

A Study on Reliable Application of LDMOS in Phased-array Radar
下载PDF
导出
摘要 为了满足新型雷达对发射系统日益提出的大功率、大工作比、长脉宽、小型化等多方面的要求,一种有效途径是将LDMOS功率晶体管引入发射机中。而将以通信应用为目的研制的LDMOS功率管可靠地应用在大型相控阵中,需要做更多的努力。文中从功率管失效机理分析入手,讨论了匹配电路设计、偏置电路设计、热设计、电磁兼容设计和接地设计对工作可靠性的重要性,针对LDMOS大功率管的低频高增益和沟道大电流的特点,着重论述了偏置电路设计中抑制震荡和冲击的方法。通过大量实验验证,文中固态功放表现出了很好的工作可靠性。该文对固态功放设计具有普遍指导作用,为新器件在雷达发射机中的应用开拓了道路。 Abstract: In order to satisfy the new-style radar's increasing requirements in transmitter's high power, high duty cycle, long pulse width, small size and so on, an effective way is to introduce LDMOS power transistor into transmitter's design. In large-scale phased-array system, we need to do more efforts in reliable application of LDMOS which is generally designed for communication. Starting with the analysis of power transistor's failure mechanism, the importance of matching circuit design, bias circuit design, cooling design, EMC design and grounding design is discussed in transistors" working reliability. Because of LDMOS" high gain in low frequency and large channel current, methods of restraining resonance and impulsion in bias design are discussed specially. In a great deal experiments, the solid-state power amplifier in paper takes on good working reliability. This paper can generally in- struct the design of solid-state amplifier, and carves out the way for the use of new devices in radar transmitter.
出处 《现代雷达》 CSCD 北大核心 2012年第12期74-77,共4页 Modern Radar
关键词 相控阵 固态发射机 新器件 LDMOS 可靠性 phased-array solid-state transmitter new device LDMOS reliability
  • 相关文献

参考文献8

二级参考文献32

  • 1张光义.相控阵雷达系统[M].北京:国防工业出版社,1997..
  • 2HUTCHINS. W D. Failure Modes and Fusing of TVS Devices [EB/OL] . [2005-10-20] . http://www.protekdevices. com/pdfFiles/articles/Failure%20Modes.pdf.
  • 3JENSON F. Electronic Component Reliability Fundamentals, Modelling, Evaluzation, and Assurance [M] . New York: John Wiley & Sons Ltd, 1995:12-13.
  • 4OBREJA V V N. An Experimental Investigation on the Nature of Reverse Current of Silicon Power Pn-Junctions [J] .Electron Devices, IEEE Transaction On, 2002, 49 (1) : 155-163.
  • 5SMITH A D, LIGHTSEY J R, HUSON R W. Method for Examining Failed (shorted) Transient Voltage Suppressors to Determine the Destructive Pulse Characteristics [C] //IEEE 1989 Natl Syrup Electromagn Compat, 1989:105-112.
  • 6CLARK O M. Continue of Surge Life of Transient Voltage Suppressor [R] . NASA-CR-150499, 1977.
  • 7GREEN T, DENSON W. A review of EOS/ESD field failures in military equipmen [ C ] //Proc of the 10^th EOS/ESO Symp. Anaheim, USA, 1988:7-14.
  • 8EUZENT B L, MALONEY T J, DONNER J C. Reducing field failure rate within proven EOS/ESO design [ C ]//Proc of the 13^th EOS/ESO Symp. Los Vegas, USA, 1991 : 59-64.
  • 9COOK C, DANIEL S. Characterization and failure analysis of advanced CMOS submicron ESD protection structures [ C ]// Proc of the 14^th EOS/ESO Symp. Dallas, USA, 1992 : 149-157.
  • 10HOWER P, LIN J, HAYNIE S, et al. Safe operating area considerations in LDMOS transistors [ C ] // Proc of the 11^th ISPSD Symp. Toronto, Canada, 1999 : 55-58.

共引文献24

同被引文献15

引证文献7

二级引证文献8

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部