摘要
在 GaAs中碳受主局域振动模光吸收主带的低能侧发现一个吸收边带.研究了该边 带的起因及其对主吸收带积分面积测定和主吸收带积分面积温度关系的影响.
A sideband absorption is observed on the low energy side of the main optical absorption band of the local vibrational mode for carbon acceptor in GaAs. The possible origin for the sideband is suggested, and the effects of this sideband on both the measurement of the integrated area of the main absorption band and the temperature dependence of the main band are also investigated.
出处
《河北工业大学学报》
CAS
2000年第2期18-21,共4页
Journal of Hebei University of Technology
基金
河北省自然科学基金!195051
关键词
GAAS
碳受主
局域振动模
光吸收
半导体
carbon acceptor in GaAs
optical absorption of local vibrational mode
temperature dependence of integrated area