摘要
本文的研究目的是对半导体模拟软件ISE-TCAD进行详细介绍,旨在介绍软件的模拟方法,并利用仿真软件ISE-TCAD对其在室温下的正向伏安特性与反向伏安特性进行了模拟仿真,并取得了有价值的数据。从模拟图的结果可知室温(303K)且偏压较低时,电流随着电压呈指数关系增长,W/SiC肖特基势垒二极管的开启电压约为0.2V;偏压较高时,电流增加缓慢,串联电阻效应明显。模拟值表明反向电流数值比正向数值小几个数量级。
[Abstract]The purpose of this Ihesis is on the semiconductor simulation software of ISE-TCAD ate introduced in detail, aims to introduce the snftware simulation method. Semiconduetor simulation software ISE-TCAD was used to simulate W/SiC SBD fi）rward voltage eharaetefisties and reverse woltage eharaeteristies at room temperatures and the valuable resuhs were achieved. At loom temperature （303K）, if bias wJltage was low, the current will be exponential growing with voltage, and the turn-on voltage of W/SiC Sehottky barrier diode was about 0.2V. If bias vohage, was high, the current increased will be slow, trod the series resistanee effect will become obvious. A reverse current value was less than the forward current values several urders of magnitude.
出处
《科技信息》
2012年第33期I0055-I0056,I0127,共3页
Science & Technology Information
