生长温度对Si基Ge量子点VLP-CVD自组织生长的影响

Temperature Dependence of Self organized Growth of Ge Quantum Dots on Si Substrate by VLP-CVD

对利用超低压化学气相淀积 (VLP CVD)技术在Si上自组织生长Ge量子点的特征进行了研究 ,发现生长温度对Ge量子点尺寸分布和密度的影响不同于分子束外延 (MBE)的结果 ,这种现象与VLP CVD表面控制反应模式有关。实验表明 。

The result of self organized growth of Ge quantum dots on Si substrate by Very Low Pressure Chemical Vapor Deposition (VLP CVD) is reported. The size distribution and density of Ge quantum dots have different dependences on the growth temperature compared with the results obtained by MBE. These phenomena could be ascribed to the effect of the surface controlled reaction by VLP CVD. Electing the optimize growth temperature, Ge quantum dots with narrow size distribution and high density can be grown on Si substrate by VLP CVD.