黑硅材料的制备及其光学特性

Preparation and Optical Characterization of Black Silicon Materials

采用金催化化学腐蚀和钝化两个过程成功制备了黑硅。利用原子力显微镜、分光光度计、红外光谱仪和光致发光光谱仪分别对黑硅的微观结构、反射率、表面状态和发光性能进行了研究。结果表明:黑硅表面呈现山峰状的微观结构,其平均反射率可低至3.31%。光致发光光谱上出现了3个发光峰,分别由量子限制效应、硅氧烯、杂质和缺陷引起。

The black silicon has been successfully produced by Au particle-assisted chemical etching.The microstructure,reflectance,surface morphology and photoluminescence properties of black silicon have been investigated by atomic force microscope,spectrophotometer,infrared spectrometer and photoluminescence spectrometer,respectively.The results show that the obtained black silicon exhibits a mountain-like structure with the average reflectance of 3.31%.The mechanism of black silicon produced by Au particle-assisted chemical etching is the combination of etching effect and passivation effect.The photoluminescence spectrum can be separated into three peaks which results from quantum confinement effect,siloxene,impurity and defect,respectively.