摘要
叙述了国内外对PiN器件雪崩电压理论极限的论述，详细说明了用ni=ND作为判定PiN器件雪崩电压理论极限依据的合理性。进而说明了这一研究的重要意义。
The literatures related to the limit of the avalanche breakdown voltage of a PiN Diode at home and abroad was reviewed, moreover, the reasonability of using ni=ND as the foundation whether the avalanche breakdown voltage of a PiN Diode reach its limit was discussed in detail, and then the important significance of this topic research was made cleared.
出处
《变频技术应用》
2012年第6期49-51,共3页
INVERTER TECHNOLOGIES AND APPLICATIONS
关键词
PIN二极管
雪崩
本征热激发载流子浓度
电压极限
PiN diode
avalanche
current filament
intrinsic carrier concentration
breakdown voltage limit
