期刊文献+

Improvement of InGaAs/GaAs vertical-cavity surface-emitting lasers by post-oxidation annealing 被引量:1

Improvement of InGaAs/GaAs vertical-cavity surface-emitting lasers by post-oxidation annealing
原文传递
导出
摘要 InGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) are fabricated by a thermal selective wet- oxidation confinement technique. Post-oxidation annealing in a nitrogen environment at high temperatures is then conducted to improve the performance of the oxide-confined InGaAs/GaAs VCSELs. The optimum post-oxidation annealing conditions are determined by changing the furnace temperature and annealing time. Compared with a unannealed laser device, the light output power increases by about 12%. An aging test is carried out to examine the reliability of the annealed oxide-confined VCSEL device. The temperature dependence of the lasing wavelength of the annealed oxide-confined VCSELs is also investigated. InGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) are fabricated by a thermal selective wet- oxidation confinement technique. Post-oxidation annealing in a nitrogen environment at high temperatures is then conducted to improve the performance of the oxide-confined InGaAs/GaAs VCSELs. The optimum post-oxidation annealing conditions are determined by changing the furnace temperature and annealing time. Compared with a unannealed laser device, the light output power increases by about 12%. An aging test is carried out to examine the reliability of the annealed oxide-confined VCSEL device. The temperature dependence of the lasing wavelength of the annealed oxide-confined VCSELs is also investigated.
出处 《Chinese Optics Letters》 SCIE EI CAS CSCD 2012年第12期68-70,共3页 中国光学快报(英文版)
基金 supported by the National Natural Science Foundation of China under Grant Nos.60676025 and 61076038
关键词 OXIDATION Surface emitting lasers Testing Oxidation Surface emitting lasers Testing
  • 相关文献

参考文献13

  • 1R. S. Geels. S. W. Corzine. and L. A. Coldren, IEEE J. Quantum Electron. 27, 1359 (1991).
  • 2W. W. Chow, K. D. Choquette, M. H. Crawford, K. L. Lear, and G. R. Haldey, IEEE J. Quantum Electron. 33, 1810 (199r).
  • 3R. Jgger, M. Grabherr, C. Jung, R. Michalzik, G. Reiner, B. Weigl, and K. J. Ebeling, Electron. Lett. 33, 330 (t997).
  • 4P. Westbergh, J. S. Gustavsson, B. K6gel, A. Haglund, A. Larsson, A. Mutig. A. Nadtochiy, D. Bimberg, and A. Joel, Electron. bett. 46, 1014 (2010).
  • 5A. Mutig, J. A. Lott, S. A. Blokhin, P. Wolf, P. Moser, W. Hofmann, A. M. Nadtochiy, A. Payusov, and D. Bim- berg, Appl. Phys. Lett. 97, 151101 (2(/10).
  • 6H. Q.Jia, H. Chen, W. C. Wang, W. X. Wang, W. Li, Q. Huang, and J. Zhou, Appl. Phys. Lett. 80, 974 (2002).
  • 7H. t{eese, Y. J. Chiu, and E. Hu, Appl. Phys. Lett. 73, 2624 (1.):)8).
  • 8M. Osinski, T. Svimonishvili, G. A. Smolyakov, V. A. Smagley, P. Mackowiak, and W. Nakwaski, IEEE Pho- tonics Technol. Lett. 13, 687 (2001).
  • 9N. C. l)as, B. Gollsneider, P. Newman, and W. Chang, Appl. Phys. Lett. 81, 1600 (2002).
  • 10P. D. Floyd and D. W. Treat, Appl. Phys. Lett. 70,.

同被引文献13

  • 1李惠青,张杰,崔大复,许祖彦,宁永强,晏长岭,秦莉,刘云,王立军,曹健林.高功率垂直腔面发射半导体激光器优化设计研究[J].物理学报,2004,53(9):2986-2990. 被引量:11
  • 2孙艳芳,金珍花,宁永强,秦莉,晏长岭,路国光,套格套,刘云,王立军,崔大复,李惠青,许祖彦.高功率底发射VCSELs的制作与特性研究[J].光学精密工程,2004,12(5):449-453. 被引量:15
  • 3马建立,郝永芹,钟景昌,赵英杰,李海军,乔忠良,冯源.垂直腔面发射激光器中选择性氧化工艺稳定性研究[J].中国激光,2007,34(8):1055-1058. 被引量:13
  • 4Jung C, King R, Jager R,et al. 64 channel flip-chipmounted selectively oxidized GaAs VCSEL arrayfor parallel optical interconnects [C]. On VerticalCavity Surface-emitting lasers IH SPIE, 1999, 3627 :143-151.
  • 5Yong Qinhao,Yan Luo,Yuan Feng,et al. Large ap-erture vertical cavity surface emitting laser with dis-tributed-ring contact [J]. Applied Optics, 2011,50(7):1034-1037.
  • 6Hao Y Q, Shang C Y, Feng Y,et al. High Power808nm Vertical Cavity Surface Emitting Laser withMulti-Ring-Shaped-Aperture Structure [J]. LaserPhysics, 2011,21:376-378.
  • 7Seurin J F,Xu G Y, Khalfin V,et al. Progress inhigh-power high-efficiency VCSEL arrays [J].SPIE,2009,7229 : 722903 (1-11).
  • 8OsinskiM, SvimonishviliT, Smolyakov GA,et al.Temperature and thickness dependence of steam ox-idation of AlAs in cylindrical mesa structures [J].IEEE Photon Technology Letter, 2001,13 (7):687-689.
  • 9Miller M, Grabherr M, King R, et al. Improvedoutput performance of high-power VCSELs [J].Selected Topics in Quantum Electronics, 2001,7(2):210-216.
  • 10冯源,钟景昌,郝永芹,赵英杰,侯立峰,么艳萍.垂直腔面发射激光器中氧化速率规律的研究[J].Journal of Semiconductors,2008,29(12):2412-2416. 被引量:1

引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部