沟槽阻挡型阳极结构门极换流晶闸管特性研究

Characteristic Research on the Gate Commutated Thyristor with a Trench Stop Anode Structure

引入沟槽结构,提出一种改进型注入效率可控门极换流晶闸管。新结构采用沟槽型阻挡结构代替阳极表面平面型氧化薄层,实现对基区漂移电子阻挡和积累作用,保持了注入效率自调整效应,减小了平面型氧化阻挡层对阳极有效面积的影响。模拟结果表明,新结构器件实现了注入效率控制功能,增大了有效阳极接触面积并降低了通态压降;其沟槽宽度可调节注入效率和关断特性。

A modified injection efficiency controlled gate commutated thyrJistor with a trench structure is proposed. A trench oxide layer stop structure is introduced into the anode surface to be substituted for the original planar structure. The novel device still keeps the injection efficien- cy-adjusted effect, and also eliminates the decrement of active anode contact caused by planar SiOz stop layer. Simulations show that the proposed device extends the active anode area and has a lower on-state voltage. And injection efficiency and turn-off characteristic can be controlled by the trench width.