摘要
讨论了功率单片在片脉冲测试中在片校准技术、脉冲功率测试技术等难题,并在讨论以上问题的基础上,实现工程化应用,该测试技术能够有效覆盖至40GHz。在建立的脉冲大功率在片测试系统上对输出功率典型值5W的GaAs功率单片放大器进行测试验证,测试结果和装架测试结果相比较,输出功率误差<0.2dB。
In this paper some key techniques of power amplifier microwave on-wafer testing are discussed including on-wafer testing calibration technique ,pulse power on-wafer testing tech- nique, these techniques have been applied to 40 GHz in practice. Based on these techniques, pulse on-wafer testing system has been set up. The difference output power of a 5 W amplifier tested between by using on-wafer pluse testing system and in-package testing system is less than 0. 2 dB.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2012年第6期579-583,共5页
Research & Progress of SSE
关键词
在片测试
脉冲功率测试
在片校准技术
on-wafer testing
pulse power testing
on wafer calibration technique
