指数型温度补偿BiCMOS带隙基准电压源设计

Design of a BiCMOS Bandgap Voltage Reference Circuit with the Exponential Curvature Temperature Compensation

利用双极型管电流增益的温度特性,采用UMC0.6μm BiCMOS工艺设计了一款指数型温度补偿BiCMOS带隙基准电压源。测试结果表明:温度在10°C～100°C之间变化,带隙基准电压随温度变化最大偏移为2.5mV;电源电压在2.5～5.0V之间变化,带隙基准电压随电源电压直流变化最大偏移为0.95mV。该带隙基准电压具有较高的温度稳定性和电压稳定性。

Using the temperature characteristics of current gain of the bipolar transistor and UMC 0. 6μm BiCMOS process,a BiCMOS bandgap volage reference circuit with the exponential curvature temperature compensation has been designed in this paper. The tested results indicat- ed： With the temperature change from 10 C to 100 C, the greatest skew of reference voltage is 2.5 mV; With the supply voltage change from 2.5 V to 5.0 V, the greatest skew of reference voltage is 0. 95 mV. This BiCMOS bandgap voltage circuit reference has high temperature stabili- ty and voltage stability.