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InAs/GaSbⅡ类超晶格与HgCdTe红外探测器的比较研究 被引量：2

Comparison of TypeⅡ InAs/GaSb Superlattices and HgCdTe Infrared Detectors
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摘要 HgCdTe、QWIP和InAs/GaSbⅡ类超晶格被公认是第三代红外焦平面探测器的首选。主要对比分析了HgCdTe和InAs/GaSbⅡ类超晶格红外探测器,InAs/GaSbⅡ类超晶格具有响应波段宽且精确可控、工作温度高、载流子寿命长、暗电流低和均匀性好等优点,使其在甚长波、多色以及非制冷红外焦平面阵列等方面具有广阔的发展应用前景。 The HgCdTe photodiodes, quantum well infrared photodiodes （QWIP） and type II InAs/GaSb superlattice photodiodes have emerged as the first candidate for third generation infrared detectors. There are many advantages of type II InAs/GaSb superlattice photodiodes over the HgCdTe photodiodes, for example, a highly adjustable broad spectral response range, higher operating temperature, longer carrier lifetime, lower leakage current and greater uniformity. There will be potential applications in the future for type II InAs/GaSb superlattice photodiode in the very long wavelength infrared（VLWIR）, multi-color and uncooled infrared Focal Plane Arrays.
作者 余连杰 邓功荣 苏玉辉
机构地区 昆明物理研究所 微光夜视技术重点实验室
出处 《红外技术》 CSCD 北大核心 2012年第12期683-689,共7页 Infrared Technology
基金 云南省应用基础研究面上项目 编号:2008CD176
关键词 INAS GASB HgCdTeⅡ类超晶格 红外探测器 InAs/GaSb, HgCdTe, type II superlattices, infrared detectors
分类号 TN215 [电子电信—物理电子学]
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参考文献40

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二级参考文献60

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红外技术
2012年 第12期

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