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氧对磁控溅射制备InN薄膜带隙的影响 被引量：4

Influence of oxygen on the band gap of InN film deposited by RF magnetron sputtering
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摘要 本文用射频磁控溅射技术,以金属铟为靶材,在石英玻璃上制备出了InN薄膜,溅射气体为氩气(Ar)和氮气(N2)的混合气体,溅射压强为0.5Pa～1.0Pa。InN晶体呈六方纤锌矿结构,随着压强的不同,晶体取向发生明显的变化,制得的InN薄膜的带隙为2.1eV～2.3eV。X射线光电子能谱(XPS)和拉曼(Raman)分析氧原子以类似In2O3的形式存在,其存在会引起InN晶体质量变差,致使InN的带隙明显升高。 In this paper, indium nitride （INN） films were deposited onto quartz glass substrates by RF magnetron sputtering using an In target. The mixed gases of argon （At） and nitrogen （ N2 ） were used as working gas, the sputtering pressures were varied in the range of 0.5Pa - 1.0Pa. InN films had a wurtzite structure, and the orientation of InN films were obvious different under the different sputtering pressures. The bandgap of deposited InN films were 2. leV -2.3eV. X - ray photoemission spectroscopy （XPS） and the Laman speculum indicated that the oxygen atoms were existed in the InN films like the form of In203 ,and it is the important reason to cause the InN film a higher banggap.
作者 石相军 汪健 朱洁 侯祥胡
机构地区 北京科技大学新金属材料国家重点实验室
出处 《功能材料与器件学报》 CAS CSCD 北大核心 2012年第5期397-402,共6页 Journal of Functional Materials and Devices
关键词 射频磁控溅射 INN 带隙 IN2O3 RF magnetron sputtering InN bandgap In2O3
分类号 TK513 [动力工程及工程热物理—热能工程]
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参考文献14

  • 1Strite S, Morkoc H. GaN, AIN, and InN : A review [ J].Journal of Vacuum Science and Technology B, 1992, 10 (4): 1237 -1266.
  • 2Wu J, Walukiewicz W,Yu K M,et al. Unusual propertiesof the fundamental band gap of InN [ J]. Applied PhysicsLetters, 2002, 80(21) : 3967 -3969.
  • 3TansleyT L, Foley C P. Optical band gap of indium nitride[J]. Journal of Applied Physics, 1986,59(9): 3241 -3244.
  • 4Wang Yan - Hsin, Chen Wei — Li, Chen Ming - Fei. Char-acterization of InN epilayers grown on Si(lll) substrates atvarious temperatures by MBE [ J]. Physica E, 2009 , 41 (10): 1746 -1751.
  • 5Matsuoka T, Okamoto H, Nakao M, et al. Optical bandgapenergy of wurtzite InN[ J]. Applied Physics Letters,2002,81(7) : 1246-1248.
  • 6Briot 0, Ruffenach S, Moret M, et al. Growth of InN filmsand nanostructures by MOVPE [ J]. Journal of CrystalGrowth,2009,311(10) ; 2761 -2766.
  • 7Natarajan B R, Eltoukhy A H, Greene J E, et al. Mecha-nisms of reactive sputtering of indium II: Growth of indiumoxynitride in mixed N2 - 02 discharges [ J]. Thin SolidFilms, 1980,69(2) : 217 -227.
  • 8Pu X D,Shen W Z, Zhang Z Q, et al. Growth and depthdependence of visible luminescence in wurtzite InN epilayers[J]. Applied Physics Letters, 2006, 88(15): 151904 - 1 -151904 -3.
  • 9Westra K L, Lawson R P W, Brett M J. The effects of oxy-gen contamination on the properties of reactively sputteredindium nitride films [ J]. Journal of Vacuum Science andTechnology A, 1988,6(3) ; 1730 -1732.
  • 10Davydov V Yu, Klochikhin A A, Emtsev V V, et al. Bandgap of hexagonal InN and InGaN alloys [ J], Physica StatusSolidi (b),2002,234(3) : 787 -795.

同被引文献24

  • 1谢自力,张荣,修向前,毕朝霞,刘斌,濮林,陈敦军,韩平,顾书林,江若琏,朱顺明,赵红,施毅,郑有炓.InN薄膜的退火特性[J].Journal of Semiconductors,2006,27(2):340-344. 被引量：3
  • 2Strite S, Morkoc H. GaN, A1N, and InN: A review [J] . Journal of Vacuum Science and Technology B, 1992, 10 (4) : 1237 - 1266.
  • 3Stephen K O' Leary, Brian E Foutz, Michael S Shur, et al. Electron transport in wurtzite indium nitride [J]. J ApplPhys, 1998, 83,826.
  • 4Norman D P, Tu L W, Chiang S Y, et al. Effect of tempera- ture and V/Ill ratio on the initial growth of indium nitride u- sing plasma - assisted metal - organic chemical vapor deposi- tion [J]. J Appl Phys, 2011, 109(6) : 063523.
  • 5Laskar M R, Kadir A, Rahman A A, et al. Optimization of a -plane( 11 -20) InN grown via MOVPE on a- plane GaN butter layers on r - plane ( 1 - 102 ) sapphire [J]. Crystal Growth ,2010,312 ( 14 ) :2033 - 2037.
  • 6Koblmuller G , Gallinat C S, Bernardis S, et al. Optimization of the surface and structural quality of N - face InN grown by molecular beam epitaxy [J]. APPL Phys Lett, 2006, 89 (7) :07192 -071904.
  • 7Roul B, Rajpalke M K, Bhat T N, et al. Influence of GaN un- der layer thickness on structural, electrical and optical proper- ties of InN films grown by PAMBE [ J]. Crystal Growth, 2012, 354(1) :208 -211.
  • 8Natarajan B R, Eltoukhy A H, Greene J E,et al. Mechanisms of reactive sputtering of indium II : Growth of indium oxynitride in mixed discharges []1. Thin Solid Films, 1980, 69(2) : 217 - 227.
  • 9Westra K L, Lawson R P W, Brett M J. The effects of oxygen contamination on the properties of reactively sputtered indium nitride films [ J ]. Journal of Vacuum Science and Technology A, 1988, 6(3) : 1730-1732.
  • 10Marasina L A, Pichugin I G, Tlaczala M. Preparation of InN epitaxial layers in system [J]. Krist Tech, 1977, 12(6) : 541 - 545.

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功能材料与器件学报
2012年 第5期

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