含氢掺硅类金刚石薄膜的制备及性能表征

Preparation and Characterization of Hydrogen Containing Si-doped DLC Film

采用磁控溅射和离子源复合沉积技术,在Si片、模具钢和硬质合金上制备了均匀致密的含氢掺硅类金刚石薄膜。先用正交法优化含氢类金刚石薄膜的制备工艺,然后通过控制中频碳化硅靶的功率密度向含氢类金刚石膜层中成功掺入Si元素。采用扫描电子显微镜(SEM)、X射线光电子能谱仪(XPS)、X射线衍射仪(XRD)、硬度计、划痕仪和摩擦磨损试验机等手段测试和研究了膜层的形貌、成分、sp3和sp2含量及其性能。结果表明:优化后含氢类金刚石薄膜的制备工艺为:30mL/min甲烷流量,100V偏压,0.8A离子源电流;所制备的含氢掺硅类金刚石薄膜是非晶结构,膜厚2.20μm,膜/基结合力为30N,膜层硬度达到2039HV。含氢掺硅类金刚石薄膜的摩擦因数受环境湿度变化很小,可应用于精密传动部件提高其使用精度。

The hydrogencontaining doped silicon DLC film, which is uniform and dense, was prepared on a Si wafer, die steel and cemented carbide using the composite deposition technology of magnetron sputtering and ion source. The preparation process of the DLC film was optimized by orthogonal method, and then Si successfully incorporated into the hydrogenated DLC film was controlled by the power density of the silicon carbide target.The film morphology, composition, and sp3 and sp2 content and their performance were tested and studied by scanning electron microscope （SEM）, Xray photoelectron spectroscopy （XPS）, Xray diffraction （XRD）, hardness tester, scratch tester, and friction and wear testing machine. The results show that the optimized preparation process of hydrogenated DLC film are methane flow of 30 mL/min, bias of 100 V and ion source current of 0.8 A. The hydrogencontaining doped silicon DLC film is amorphous structure, the adhesion strength is 30 N, and the hardness attains 2039 HV with the thickness of 2.20 μm. The friction coefficient of hydrogencontaining doped silicon DLC films slightly changes with the ambient humidity; therefore, the SiDLC films can be applied to precision transmission components to improve their accuracy.