摘要
利用磁控溅射技术在普通玻璃基片上制备了VO2薄膜,晶体结构和表面形貌分析表明制备的样品主要具有VO2相,结晶情况良好.利用自制真空变温薄膜电阻测试仪器测试了VO2薄膜的电阻率随温度变化曲线,观察到钒氧化物的电阻突变和热滞现象.
VO2 thin films were deposited Structural and surface topographical analysis The resistivity of VO2 thin film was measured vacuum and under varying temperatures, and oxide were observed. on normal glass substrates by magnetron sputtering. indicated that the sample was finely-crystallized VO2. by self-made film resistance measurement instrument in the resistance saltation and heat stagnation in vanadium
出处
《物理实验》
2012年第12期1-4,47,共4页
Physics Experimentation
基金
中央高校基本科研业务费专项基金(No.2009JBM098)
北京市自然基金(No.2113050)
关键词
磁控溅射
VO2薄膜
电阻率
温度
magnetron sputtering
VO2 thin film
resistivity
temperature
