摘要
研究了用PECVD薄膜沉积设备制作氮化硅薄膜的透过率。通过改变沉积工艺参数,研究了沉积温度、射频功率、SiH4流量和腔体压强对薄膜透过率曲线的影响,并分析影响原因。
The transmittance on silicon nitride thin films that were fabricated by PECVD are studied in this paper.A serial of detailed experiment s are carried out, which mainly studied how the processing parameters-deposit temperature, RF power, flow of SiH4 and Chamber pressure - influence the transmittance of silicon nitride films, and analysis the reason.
出处
《科技创新导报》
2012年第32期13-15,17,共4页
Science and Technology Innovation Herald
关键词
氮化硅薄膜
透过率
PECVD
silicon nitride thin films transmittance PECVD
