后摩尔时代集成电路的新器件技术

New device technologies of integrated circuit in post-Moore era

随着大规模集成电路(IC)技术的持续发展,来自短沟效应、量子隧穿以及寄生效应等问题的挑战使得传统微电子器件技术越来越难以满足IC技术持续推进的要求,特别是日益严峻的能耗问题已经成为延续摩尔定律的最大瓶颈,在后摩尔时代采用新器件技术成为必然.面向不同集成电路应用如何发展适合未来微电子产业需求的纳米尺度新器件成为当前热点问题.本文结合新结构器件、新原理器件和新材料的引入介绍适于大规模集成的纳米尺度新器件技术,包括FinFET器件、超薄体SOI器件、准SOI器件、多栅/围栅硅纳米线器件、超陡亚阈摆幅器件、高迁移率沟道器件等,分析相关器件优势、存在问题、可能解决方案及应用前景等,并讨论后摩尔时代新器件技术路线图,给出相关预测.

With the continuous development of large scale integrated circuit（IC） technology,challenges resulting from short channel effects,quantum tunneling and parasitic effects make it increasingly difficult for conventional microelectronic device technology to fulfill the demand of sustaining progressing of IC technology node,and especially the increasingly serious problem of energy consumption has been the greatest bottleneck in continuing Moore＇s Law,making it inevitable to take advantage of new device technology in post-Moore＇s era.Therefore,it has become a hot issue that how to develop nanoscale new devices to meet the future demands of microelectronic industry in different IC applications.In this paper,we introduce new device technologies from viewpoints of new structure,new principle and new material,including FinFET,UTB SOI devices,quasi-SOI devices,MultiGate/Gate-All-Around silicon nanowire devices,super steep sub-threshold swing devices and high mobility channel devices.Advantages,existing problems,potential solutions and application prospect of these devices are analyzed,and a roadmap for new device technology in post-Moore era is discussed.