金刚石表面Cr金属化的界面扩散反应研究

The Study of Interface Diffusion and Reaction between Cr and Diamond Deposited by Magnetron Sputtering Technigue

利用直流磁控溅射法在金刚石颗粒表面沉积了厚度为150nm的金属Cr薄膜。SEM研究表明在金刚石表面形成的Cr膜基本均匀,但有小的金属聚集体存在。俄歇深度剖析研究发现,在镀膜过程中Cr膜和金刚石基底间发生了显著的界面扩散作用。相应的俄歇线形分析表明,沉积过程中在界面上发生化学反应形成了部分Cr2C3物种。溅射沉积功率对金刚石颗粒与金属Cr膜的界面扩散反应有较大的影响。提高溅射功率可大大促进Cr元素的扩散,但对于C元素的扩散作用则影响较小。界面扩散反应的本质是荷能Cr原子与金刚石基底的碰撞注入作用。

A Cr layer with thickness of 150nm was successfully deposited on the surface of diamond particles using DC magnetron sputtering technique. The interface diffusion and reaction between Cr layer and diamond substrate have been studied using AES depth profile and line shape analyses. The results show that interface diffusion and reaction take place during the deposition of Cr layer. The Cr atoms diffuse into diamond substrate, and react with carbon atom in diamond to form carbide on the interface. The interface diffusion and reaction result from the impact of Cr atoms which keep an energy of 3~4eV. The interface diffusion and reaction can be promoted significantly by raising the sputtering power.