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砷化镓光导开关中流注自发辐射实验的理论分析 被引量：3

Theoretical Analysis of Streamer Radiation in GaAs Photoconductive Semiconductor Switches(PCSS)
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摘要 分析了高增益砷化镓光导开关中流注(即电流丝)一端不同辐射波长的自发辐射实验现象,导出了不同辐射波长的辐射复合系数之间的关系,拓展了电流丝的自发辐射随电流丝电流变化的数学模型. The spontaneous radiative phenomenon of different wavelength of radiation at one end of a stre- amer （i. e. current filament） in high gain GaAs photoconductive semiconductor switches （PCSS） was ana- lyzed. The relationship among radiative recombination coefficients of different radiative wavelengths was in- duced. And the mathematical model of spontaneous radiation of current filament with the change of current filament was expanded. The results show that the other intensity peaks of spontaneous radiation of the stre- amer are slightly less than the spontaneous radiation intensity of 890nm when the filament currents are the same .
作者 刘鸿 郑理 杨洪军 杨维 郑勇林
机构地区 成都大学电子信息工程学院 成都工业学院机电工程系
出处 《成都大学学报（自然科学版）》 2012年第4期324-326,共3页 Journal of Chengdu University（Natural Science Edition）
基金 四川省科技厅基础应用研究计划(2010JY0160)资助项目
关键词 砷化镓光导开关 电流丝 辐射复合系数 辐射强度 GaAs photoconductive semiconductor switch （PCSS） current filament radiative recombination coefficient radiative intensity
分类号 TN365 [电子电信—物理电子学]
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共引文献21

同被引文献37

  • 1刘鸿.非线性光导开关中的高场畴机制[J].成都大学学报（自然科学版）,2007,26(3):228-231. 被引量：4
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  • 6SCHOENBACH K H,KENNEY J S,PETERKIN F E. Temporal development of electric field structures in photoconductive GaAs switches[J].{H}Applied Physics Letters,1993,(15):2100-2102.
  • 7LOUBRIEL G M,ZUTAVERN F J,HJALMARSON H P. Measurement of the velocity of current filaments in optically triggered,high gain GaAs switches[J].{H}Applied Physics Letters,1994,(24):3323-3325.
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  • 10KAYASIT P,JOSHI R P,ISLAM N. Transient and steady state simulations of internal temperature profiles in high-power semi-insulating GaAs photoconductive switches[J].{H}Journal of Applied Physics,2001,(02):1411-1417.doi:10.1063/1.1335824.

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成都大学学报（自然科学版）
2012年 第4期

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