摘要
本文对PD SOI NMOS器件进行了60Coγ射线总剂量辐照的实验测试,分析了不同的栅长对器件辐射效应的影响及其物理机理.研究结果表明,短沟道器件辐照后感生的界面态密度更大,使器件跨导出现退化.PD SOI器件的局部浮体效应是造成不同栅长器件辐照后输出特性变化不一致的主要原因.短沟道器件输出特性的击穿电压更低.在关态偏置条件下,由于背栅晶体管更严重的辐射效应,短沟道SOI器件的电离辐射效应比同样偏置条件下长沟道器件严重.
The gate length dependence of PD SOI NMOS device on total dose irradiation is investigated, which is exposed to 60Coγgamma ray at a dose rate of 50 rad(Si)/s. The result shows that the transistor with shorter gate length shows larger radiation-induced interface trap density, which leads to the maximum transconductance degradation. The local floating body effect induces the output characteristic variation of irradiated MOSFET with gate length. After irradiation, the breakdown voltage of short channel SOI device decreases. Due to the buried oxide, the radiation-induced degradation of short channel SOI device is much serious compared with that of long channel SO1 device.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2012年第24期125-130,共6页
Acta Physica Sinica
基金
国家自然科学基金(批准号:61076097
60936005)
教育部科技创新工程重大项目培育资金(批准号:708083)
中央高校基本科研业务费专项资金(批准号:20110203110012)资助的课题~~