非晶Fe_xZn_(1-x)O薄膜的结构、磁性和电性能

Structural,magnetic and electrical properties in Fe_xZn_(1-x)O amorphous films

采用射频共溅射方法制备了FexZn1-xO(x=0.80,0.86,0.93)非晶薄膜,该薄膜具有较强的室温铁磁性,制备态的Fe0.93Zn0.07O的饱和磁化强度Ms可达333.29emu/cm3,磁性能是各向同性的.与多晶的FexZn1-xO(x20%)不同的是样品出现了明显的异常霍尔效应(AHE),样品均为n型半导体,载流子浓度约为1019—1020cm3.退火后的样品在低温222K下存在着电阻极小值现象.薄膜的低温电阻导电机理属于自旋依赖的电子变程跃迁机理,上述实验结果表明高Fe含量的非晶FeZnO体系有作为新型自旋电子学器件材料的可能.

The FezZn1-xO （x = 0.80, 0.86, 0.93）amorphous films were fabricated by RF sputtering method. The films each have a strong ferromagnetism at room temperature. The saturation magnetization Ms can reacl 333.29 emu/cma in the as-sputtered Fe0.93Zn0.07O. Magnetism is isotropic. The sample obviously exhibits an anomalous Hall effect, which is different from the poly- crystalline FezZn1-xO （x ≤ 20%）. The samples are of n-type semiconductor, with a carrier concentration of about 10^19--10^20 cm-3. After being annealed, the samples each present a resistance minimum phenomenon at a low temperature （222 K）. The conductive mechanism is of the spin dependent variable range hopping resistance in the low-temperature. The experimental results show that amorphous FeZnO system of high Fe composition is a potential candidate of the new spintronic device materials.