标准CMOS工艺新型多晶硅PIN-LED的设计与实现

Design and realization of a novel polycrystalline Si PIN-LED with standard CMOS technology

采用联华电子公司(UMC)0.18μm标准CMOS工艺设计并制备了多晶硅PIN-LED,测试结果表明,i区宽为10μm器件的正向导通电压为1.5V,反向击穿电压为8.8V;当其工作在正向载流子注入模式时发射950～1 250nm波段的红外光,工作在反向雪崩击穿模式时发射650～1 000nm波段的可见光。实验结果表明,本文以多晶硅材料制备的PIN-LED与单晶硅材料制备的Si-LED具有类似的电学特性与光学特性。

Abstract： Until now, the optical characteristics of poly-silicon have not been researched and utilized. In order to solve this problem,the PIN LED is designed and fabricated in the commercial standard 0. 18μm CMOS process which is offered by United Microelectronics Corporation （UMC） without any modifiea tion. Experimental results suggest that the forward and reverse breakdown voltages of the device, whose width of i region is 10μm,are 1.5 V and 8.8 V respectively. The spectrum ranges from 950 nrn to 1250 nm （the infrared band） when it works at the positive carriers injection mode,while ranging from 650 nm to 1000 nm （the visible light band） at the reverse avalanche breakdown mode. It includes three peaks in the infrared band,the wavelengths of the two main peaks are λ= 1110 nm （E=1. 12 eV） and λ=1 150 nm （E=1.08 eV）,respectively,and the wavelength of the secondary peak is λ= 1 050 nm （E-1.18 eV）. And there is only one main peak in the visible light band,whose wavelength is 730-780 nm （1.59 -1.70 eV）. It is confirmed that the PIN-LED made by poly-silicon materials and the LED made by mono-crystalline materials have similar electrical and optical properties, after comparing the above exper imental data with the mono-crystalline＇s I-V characteristics and spectra which have already been reported.