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基于GaAs光导开关的纳秒脉冲源设计 被引量：5

Design of nanosecond pulsed power source based on GaAs PCSS
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摘要 以高密度聚乙烯介质平板型B线为储能器件,设计了一台层叠Blumlein传输线型脉冲功率源。以GaAs PCSS为开关,通过4级B线层叠结构实现电压倍增。单级B线阻抗25Ω,时间常数2.5 ns,功率源总阻抗100Ω。Pspice模拟表明:随着开关导通电阻上升,输出电压脉冲幅度下降,脉宽增大;随着开关转换时间增长,输出脉冲延迟时间上升,前、后沿时间增长。采用波长为1 064 nm,能量为30 mJ,脉宽为5 ns的Nd:YAG激光器触发光导开关,当充电25 kV时,负载上得到电压38 kV,上升沿1.4 ns,脉冲约5 ns的近似方波输出。 A nanosecond pulsed power source based on stacked Blumlein line is designed,consisting of four stages of plate Blumlein line,and each line with a GaAs Photoconductive Semiconductor Switches（PCSS）.The Blumlein line is based on high-density polyethylene for energy storage.Its pulse width,impedance and total impedance are 2.5 ns,25Ω,and 100Ω respectively.A Pspice model of the pulsed power source is established.Simulation results indicate that output voltage is affected by isolation resistance of the charging circuit,closed resistance and transition time of GaAs switch.Nanoseconds laser triggering experiments are tested,and the output waveforms are close to square waves with 38 kV of voltage,1.4 ns of rising edge under 25 kV of charging voltage.
作者 姜苹 谢卫平 李洪涛 袁建强 刘宏伟 刘金锋 赵越
机构地区 中国工程物理研究院流体物理研究所
出处 《信息与电子工程》 2012年第6期744-747,770,共5页 information and electronic engineering
关键词 GAAS光导开关 层叠B线 脉冲充电 纳秒激光 GaAs Photoconductive Semiconductor Switches stacked Blumlein line pulse charge nanosecond laser
分类号 TN782 [电子电信—电路与系统]
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参考文献12

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共引文献33

同被引文献41

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引证文献5

二级引证文献9

信息与电子工程
2012年 第6期

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