摘要
在回顾半导体器件辐射效应取得丰富研究成果的基础上,介绍近年来半导体辐射效应研究的一些动向,其中包括航空及地面环境的单粒子效应、综合辐射环境下的辐射效应、化合物半导体器件的单粒子效应、光电器件的辐射效应、功率半导体器件的辐射效应、绝缘体上硅(SOI)CMOS集成电路的辐射效应及混合信号电路辐射加固设计技术,给出了一些典型的研究结果,并指出在这些效应方面应该继续研究的方向。
Basing on the retrospect for rich research fruits of radiation effects in semiconductor device,this paper introduces some research trends of radiation effects in semiconductor devices,such as single event effects in avionics and on the ground,radiation effects in synthetic radiation environments,single event effects in compound semiconductor devices,radiation effects in photoelectric devices,radiation effects in power semiconductor devices,radiation effects in Silicon on Insulator（SOI） CMOS integrated circuits and design techniques of radiation hardening for mixed-signal circuits.Some typical research results are given and some research directions which should be continued also are pointed out.
出处
《信息与电子工程》
2012年第6期748-753,共6页
information and electronic engineering
关键词
半导体器件
抗辐射加固
研究动向
semiconductor device
radiation hardening
research trends
