摘要
The electron flux distributions in the photodetachment of HF- near an interface are studied using a two-center model and the theoretical imaging method. An analytical expression for electron flux distributions is derived, which displays oscillations on an observation plane similar to the recent results published by Wang but in the presence of a static electric field. We also discuss the expressions for soft and hard wall cases in detail. A comparison is made with the previous work. The expression is a more general result, and we can deduce from it the electron flux distributions for the photodetachment of H2 near an interface. Finally, we show that the expression reveals similar results as those in [Chin. Phys. B 19 020306 （2010）] when the wall effect is neglected.
The electron flux distributions in the photodetachment of HF- near an interface are studied using a two-center model and the theoretical imaging method. An analytical expression for electron flux distributions is derived, which displays oscillations on an observation plane similar to the recent results published by Wang but in the presence of a static electric field. We also discuss the expressions for soft and hard wall cases in detail. A comparison is made with the previous work. The expression is a more general result, and we can deduce from it the electron flux distributions for the photodetachment of H2 near an interface. Finally, we show that the expression reveals similar results as those in [Chin. Phys. B 19 020306 （2010）] when the wall effect is neglected.
