退火对电子辐照氮化镓光电性能的影响

Effect of Annealing on Optical and Electrical Properties of GaN Irradiated by Electrons

本文对10 MeV电子辐照的GaN进行了不同温度的热退火处理。用光致发光谱和霍尔测量了样品的光电性能随退火温度的变化。实验结果表明:黄光带强度、电子浓度和电子迁移率随退火温度呈非线性变化。在200～600℃退火范围内,黄光带、电子浓度和电子迁移率的变化是由于辐照Ga空位与O施主杂质的结合和断裂引起的。800℃退火后黄光带、电子浓度和电子迁移率的变化与电子辐照引入的N空位有关。

GaN irradiated by 10 MeV electrons was annealed at the temperature range 200-800 ℃.Photoluminescence spectra（PL） and Hall measurements were used to measure optical and electrical properties of the annealed samples as a function of annealing temperature,respectively.The results indicate that the yellow luminescence,electron concentration and mobility show a non-monotonous dependence on the annealing temperature up to 800 ℃.The yellow luminescence,electron concentration and mobility in the annealing range 200-600 ℃ are attributed to the combination and dissociation of Ga vacancy and O shallow donor,the yellow luminescence,electron concentration and mobility at the annealing temperature of 800 ℃ are associated with N vacancy.