摘要
本文对10 MeV电子辐照的GaN进行了不同温度的热退火处理。用光致发光谱和霍尔测量了样品的光电性能随退火温度的变化。实验结果表明:黄光带强度、电子浓度和电子迁移率随退火温度呈非线性变化。在200~600℃退火范围内,黄光带、电子浓度和电子迁移率的变化是由于辐照Ga空位与O施主杂质的结合和断裂引起的。800℃退火后黄光带、电子浓度和电子迁移率的变化与电子辐照引入的N空位有关。
GaN irradiated by 10 MeV electrons was annealed at the temperature range 200-800 ℃.Photoluminescence spectra(PL) and Hall measurements were used to measure optical and electrical properties of the annealed samples as a function of annealing temperature,respectively.The results indicate that the yellow luminescence,electron concentration and mobility show a non-monotonous dependence on the annealing temperature up to 800 ℃.The yellow luminescence,electron concentration and mobility in the annealing range 200-600 ℃ are attributed to the combination and dissociation of Ga vacancy and O shallow donor,the yellow luminescence,electron concentration and mobility at the annealing temperature of 800 ℃ are associated with N vacancy.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2012年第6期1524-1527,共4页
Journal of Synthetic Crystals
基金
河北省自然科学基金(F2012202083)
河北省青年科学基金(F2009000124)
关键词
GAN
辐照缺陷
黄光带
电子浓度
GaN
irradiation defect
yellow luminescence
electron concentration