摘要
本文通过硅片旋转磨损试验模拟线切割过程,以评价切割液的切割性能。首先,通过对比试验选出线切割液的主要组份;接着,通过正交试验优化各组份的含量并得到最优配方;最后,在相同条件下将最优配方与某市场切割液进行比较。结果表明:自制最优配方切割液MRR为7820 nm/min,Ra为9.12 nm。与市场切割液相比MRR稍低,但表面粗糙度要好。分析原因是由于新配方切割液在分散性和润滑性方面有所提高,而且碱性变强,加大了化学作用,有效的提高了晶片表面质量。
In this paper,through the silicon wafer wear test simulation wire cutting process,to evaluate the liquid's cutting performance.Firstiy,selecting the main components of wire cutting fluid from the contrast experiment;then,optimizationing the content of the components by orthogonal experiment and optimal formula was obtained;finally,the optimal formula and a market cutting fluid were compared under the same conditions.The results showed that MRR was 7820 nm/min and Ra was 9.12 nm under the optimal formula.Compared with the market cutting fluid,MRR was a little less,but obtained better surface roughness.The reason is that new cutting fluid improved the dispersity and lubricity.More alkaline increased the chemical actions and effective improved the wafer surface quality.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2012年第6期1726-1731,1736,共7页
Journal of Synthetic Crystals
基金
国家自然科学基金(51175228)
2011年度江苏省研究生创新工程项目
关键词
硅片
多线切割
线切割液
材料去除率(MRR)
silicon wafer
multi-wire sawing
wire cutting fuilds
material removal rate(MRR)